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| HMC451LC3 v00.0605 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz 5 AMPLIFIERS - SMT Typical Applications The HMC451LC3 is ideal for use as a medium power amplifier for: * Microwave Radio & VSAT * Military & Space * Test Equipment & Sensors * Fiber Optics * LO Driver for HMC Mixers Features Gain: 19 dB Saturated Power: +21 dBm @ 21% PAE Output IP3: +30 dBm Single Supply: +5.0 V @ 114 mA 50 Ohm Matched Input/Output RoHS Compliant 3 x 3mm SMT package Functional Diagram General Description The HMC451LC3 is an efficient GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless RoHS compliant SMT package. Operating between 5 and 20 GHz, the amplifier provides 19 dB of gain, +21 dBm of saturated power and 21% PAE from a single +5.0V supply. This 50 Ohm matched amplifier does not require any external components and the RF I/O's are DC blocked, making it an ideal linear gain block or driver for HMC SMT mixers. The HMC451LC3 allows the use of surface mount manufacturing techniques. Electrical Specifications, TA = +25 C, Vdd = +5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) 16.5 16 Min. Typ. 5 -15 19 0.015 13 12 19.5 21 32 7 114 16 0.025 15 Max. Min. Typ. 15 - 18 18 0.015 13 8 19 20.5 29 6.5 114 16.5 0.025 14 Max. Min. Typ. 18 - 20 17 0.015 12 8 19.5 21 29 7 114 0.025 Max. Units GHz dB dB/ C dB dB dBm dBm dBm dB mA 5 - 246 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC451LC3 v00.0605 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 3 5 7 9 11 13 15 17 19 21 23 25 FREQUENCY (GHz) Gain vs. Temperature 24 22 20 18 GAIN (dB) 16 14 12 10 8 6 4 2 0 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C 5 AMPLIFIERS - SMT 5 - 247 S21 S11 S22 Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 +25C +85C -40C RETURN LOSS (dB) -10 RETURN LOSS (dB) 18 20 22 -5 +25C +85C -40C -5 -10 -15 -15 -20 4 6 8 10 12 14 16 FREQUENCY (GHz) -20 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) P1dB vs. Temperature 26 24 22 20 18 16 14 12 10 8 6 4 2 0 4 6 8 10 12 14 Psat vs. Temperature 26 24 22 20 18 16 14 12 10 8 6 4 2 0 4 6 8 10 12 14 P1dB (dBm) +25C +85C -40C Psat (dBm) +25C +85C -40C 16 18 20 22 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC451LC3 v00.0605 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz 5 AMPLIFIERS - SMT Power Compression @ 10 GHz 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -18 -16 -14 -12 -10 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm) Gain (dB) PAE (%) Power Compression @ 20 GHz 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -18 -16 -14 -12 -10 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm) Gain (dB) PAE (%) -8 -6 -4 -2 0 2 4 6 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature 40 38 36 Noise Figure vs. Temperature 11 10 9 NOISE FIGURE (dB) 8 7 6 5 4 3 2 1 0 +25C +85C -40C 34 OIP3 (dBm) 32 30 28 26 24 22 20 18 16 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -40C 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) Gain, P1dB & PSAT vs. Supply Voltage @ 11 GHz 22 GAIN (dB), P1dB (dBm), Psat (dBm) 21 20 19 18 17 16 4.5 Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 +25C +85C -40C Gain P1dB Psat 5 Vdd Supply Voltage (Vdc) 5.5 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) 5 - 248 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC451LC3 v00.0605 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 10 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +5.5 Vdc +10 dBm 175 C 0.9 W 100 C/W -65 to +150 C -40 to +85 C Typical Supply Current vs. Vdd Vdd (V) +4.5 +5.0 +5.5 Idd (mA) 111 114 116 5 AMPLIFIERS - SMT 5 - 249 Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC451LC3 v00.0605 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz 5 AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 2, 4 - 9, 11, 12, 14, 15 3 10 Function N/C Description This pin may be connected to RF/DC ground. Performance will not be affected. This pin is AC coupled and matched to 50 Ohms from 5 - 20 GHz. This pin is AC coupled and matched to 50 Ohms from 5 - 20 GHz. Interface Schematic RFIN RFOUT 13 Vdd2 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1,000 pF and 2.2 F are required. 16 Vdd1 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1,000 pF and 2.2 F are required. GND Package bottom must be connected to RF/DC ground. Application Circuit Component C1, C2 C3, C4 C5, C6 Value 100 pF 1,000 pF 2.2 F 5 - 250 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC451LC3 v00.0605 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Evaluation PCB 5 AMPLIFIERS - SMT List of Materials for Evaluation PCB 111667 Item J1 - J2 J3 - J5 C1, C2 C3, C4 C5, C6 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum HMC451LC3 Amplifier 111665 Evaluation PCB, 10 mils [1] [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 251 |
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